Antimony trisulfide
Antimony trisulfide (Sb2S3) is found in nature as the crystalline mineral stibnite and the amorphous red mineral (actually a mineraloid) metastibnite. It is manufactured for use in safety matches, military ammunition, explosives and fireworks. It also is used in the production of ruby-colored glass and in plastics as a flame retardant. Historically the stibnite form was used as a grey pigment in paintings produced in the 16th century. In 1817, the dye and fabric chemist, John Mercer discovered the non-stoichiometric compound Antimony Orange (approximate formula Sb2S3·Sb2O3), the first good orange pigment available for cotton fabric printing.
| Names | |
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| IUPAC names
Antimony(III) sulfide Diantimony trisulfide | |
Other names
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| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.014.285 |
PubChem CID |
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| UNII | |
CompTox Dashboard (EPA) |
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SMILES
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| Properties | |
| Sb2S3 | |
| Molar mass | 339.70 g·mol−1 |
| Appearance | Grey or black orthorhombic crystals (stibnite) |
| Density | 4.562g cm−3 (stibnite) |
| Melting point | 550 °C (1,022 °F; 823 K) (stibnite) |
| Boiling point | 1,150 °C (2,100 °F; 1,420 K) |
| 0.00017 g/(100 mL) (18 °C) | |
Magnetic susceptibility (χ) |
−86.0·10−6 cm3/mol |
Refractive index (nD) |
4.046 |
| Thermochemistry | |
Heat capacity (C) |
123.32 J/(mol·K) |
Std enthalpy of formation (ΔfH⦵298) |
−157.8 kJ/mol |
| Hazards | |
| NFPA 704 (fire diamond) |
2
0
0 |
| Lethal dose or concentration (LD, LC): | |
LD50 (median dose) |
> 2000 mg/kg (rat, oral) |
| NIOSH (US health exposure limits): | |
PEL (Permissible) |
TWA 0.5 mg/m3 (as Sb) |
REL (Recommended) |
TWA 0.5 mg/m3 (as Sb) |
| Related compounds | |
Other anions |
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Other cations |
Arsenic trisulfide Bismuth(III) sulfide |
Related compounds |
Antimony pentasulfide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references | |
Antimony trisulfide was also used as the image sensitive photoconductor in vidicon camera tubes. It is a semiconductor with a direct band gap of 1.8–2.5 eV. With suitable doping, p and n type materials can be produced.