J. B. Gunn

J. B. Gunn
J. B. Gunn
	Gunn (middle) with friends at a party, 1969.
Born	13 May 1928; Cairo, Egypt
Died	2 December 2008 (aged 80); Mount Kisco, New York, US
Citizenship	British
Alma mater	Trinity College, Cambridge
Known for	Gunn effect
Awards	IEEE Fellow (1968); IEEE Morris N. Liebmann Memorial Award (1969); John Scott Award (1971); IBM Fellow (1971); Valdemar Poulsen Medal (1973);
	Scientific career
Fields	Semiconductor Physics
Institutions	Elliott Brothers; Royal Radar Establishment; University of British Columbia; Thomas J. Watson Research Center;

John Battiscombe "J. B." Gunn (13 May 1928 – 2 December 2008), known as Ian or Iain, was a British physicist, who spent most of his career in the United States. He discovered the Gunn effect, which led to the invention of the Gunn diode, the first inexpensive source of microwave power that did not require vacuum tubes. He was born John Battiscombe Gunn, but only used that name in legal documents.

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